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NTMFS4935N Power MOSFET
Features
30 V, 93 A, Single N-Channel, SO-8 FL
* * * *
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
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V(BR)DSS 30 V RDS(ON) MAX 3.2 mW @ 10 V 4.2 mW @ 4.5 V 93 A ID MAX
Applications
* CPU Power Delivery, DC-DC Converters
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA 10 s (Note 1) Power Dissipation RqJA 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 100C TA = 25C TA = 25C TA = 100C TA = 25C TA = 25C TA = 100C TA = 25C TC = 25C TC = 85C TC = 25C TA = 25C, tp = 10 ms TA = 25C
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Symbol VDSS VGS ID PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS Value 30 20 21.8 13.8 2.63 40 25 8.7 W W A Unit V V A
D (5,6)
G (4) S (1,2,3) N-CHANNEL MOSFET
13 8.2 0.93 93 59 48 275 100 -55 to +150 44 6 126.1
A
1
MARKING DIAGRAM
D SO-8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4935N AYWWG G D D
W A
D
W A A C
Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT
A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
A V/ns mJ Device NTMFS4935NT1G NTMFS4935NT3G Package SO-8 FL (Pb-Free) SO-8 FL (Pb-Free) Shipping 1500 / Tape & Reel 5000 / Tape & Reel
Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 30 V, VGS = 10 V, IL = 29 Apk, L = 0.3 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
TL
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
August, 2009 - Rev. 4
1
Publication Order Number: NTMFS4935N/D
NTMFS4935N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State (Note 4) Junction-to-Ambient - (t 10 s) (Note 3) 3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA RqJA Value 2.6 47.5 134.8 14.4 C/W Unit
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V VGS = 4.5 V Forward Transconductance gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 10 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 15 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 1.5 V, ID = 15 A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 16.3 20 27.5 6.6 ns 3579 1264 39 22 5.6 10.2 3.0 49.4 nC nC 4850 1710 59 pF VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 15 1.0 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA 1.2 1.63 4.0 2.7 2.7 3.7 3.7 32
2.0
V mV/C
3.2 mW
4.2
S
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures.
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NTMFS4935N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LG RG TA = 25C VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.85 0.72 44.4 21.6 22.8 45 nC ns 1.1 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 11.2 18.7 28.3 12.1 ns Symbol Test Condition Min Typ Max Unit
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance
0.65 0.005 1.84 1.1 2.0
nH nH nH W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures.
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NTMFS4935N
TYPICAL CHARACTERISTICS
180 160 ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20 0 0 1 2 160 VGS = 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 3 2.4 V 4 TJ = 25C ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20 0 1.0 1.5 TJ = 25C VDS = 10 V
10 V 7V 4.5
4.2 V
TJ = 125C TJ = -55C 2.0 2.5 3.0 3.5 4.0 VGS, GATE-TO-SOURCE VOLTAGE (V)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 2.0 0.0050 0.0048 0.0046 0.0044 0.0042 0.0040 0.0038 0.0036 0.0034 0.0032 0.0030 0.0028 0.0026 0.0024 0.0022 0.0020
Figure 2. Transfer Characteristics
ID = 30 A TJ = 25C
TJ = 25C VGS = 4.5 V
VGS = 10 V
3.0
4.0
5.0
6.0 VGS (V)
7.0
8.0
9.0
10
20
40
60
80
100
120
140
160
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. VGS
1.9 1.8 ID = 30 A 1.7 VGS = 10 V 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 10,000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150C IDSS, LEAKAGE (nA) 1000 TJ = 125C TJ = 85C 100
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
25
50
75
100
125
150
10
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTMFS4935N
TYPICAL CHARACTERISTICS
4500 4000 C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0 0 5 10 Crss 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss Ciss 11 10 9 8 7 6 5 4 3 2 1 0 Qgs Qgd TJ = 25C VDD = 15 V VGS = 10 V ID = 30 A 10 15 20 25 30 35 40 45 50 QT
VGS = 0 V TJ = 25C
VGS, GATE-TO-SOURCE VOLTAGE (V)
0
5
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (A) VDD = 15 V ID = 15 A VGS = 10 V t, TIME (ns) 100 td(off) tf tr td(on) 10 30 25 20 15 10
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V
TJ = 125C
TJ = 25C 5 0
1
1
10 RG, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 1000 100 10 1 0.1 0.01 0.01 0 VGS 20 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 130 120 110 100 90 80 70 60 50 40 30 20 10 0
Figure 10. Diode Forward Voltage vs. Current
ID = 29 A
ID, DRAIN CURRENT (A)
10 ms 100 ms 1 ms 10 ms
dc 100
25
50
75
100
125
150
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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NTMFS4935N
TYPICAL CHARACTERISTICS
1000 100 R(t) (C/W) 10 1 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) 0.1 1 10 100 1000 Duty Cycle = 50% 20% 10% 5% 2% 1%
Figure 13. Thermal Response
70 60 50 GFS (S) 40 30 20 10 0 0 10 20 30 40 50 ID (A) 60 70 80 90 100
Figure 14. GFS vs. ID
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NTMFS4935N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO-8FL) CASE 488AA-01 ISSUE D
0.20 C D 2 D1 A B
2X
2X
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --- 4.22 6.15 BSC 5.50 5.80 6.10 3.45 --- 4.30 1.27 BSC 0.51 0.61 0.71 0.51 --- --- 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _
0.20 C E1 2 E c
4X
q
A1
1
2
3
4
TOP VIEW
3X
C
SEATING PLANE
0.10 C A 0.10 C SIDE VIEW
8X
e
DETAIL A
DETAIL A
SOLDERING FOOTPRINT*
1.270
3X
b e/2
1 4
0.750
4X
STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN
0.10 0.05
CAB c L
1.000
4X
K 1.330
PIN 5 (EXPOSED PAD)
0.965 0.905
2X 2X
E2 L1
M
0.495 3.200 0.475
2X
4.530
G
D2 BOTTOM VIEW 1.530 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4935N/D

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